Strain field around a single-dimer vacancy of Si(100) surface studied by a Monte Carlo simulation

Surface Science

Volumn 402-404, Issue , 1998, Pages 851-855

  Okamoto, M ^a   Yokoyama, T ^a   Takayanagi, K ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A type defect; Dimer buckling; Monte Carlo simulation; Si(100) surface

Indexed keywords

ANTIFERROMAGNETISM; COMPUTER SIMULATION; CRYSTAL DEFECTS; MONTE CARLO METHODS; ORDER DISORDER TRANSITIONS; STRAIN; SURFACE STRUCTURE;

SINGLE DIMER VACANCIES;

SEMICONDUCTING SILICON;

EID: 0031642190     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00978-3     Document Type: Article

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