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Surface Science

Volumn 402-404, Issue , 1998, Pages 542-546

A study of ion-implanted Si(111) and Si(111)/silicon oxide by optical second harmonic generation

(8) Kravetsky, I V a Kulyuk, L L a McGilp, J F b Cavanagh, M b Chandola, S b Boness, J c Marowsky, G c Harbsmeier, F d

a INSTITUTE OF APPLIED PHYSICS (Moldova)

b TRINITY COLLEGE DUBLIN (Ireland)

c LASER LABORATORIUM GÖTTINGEN E V (Germany)

d UNIVERSITY OF GÖTTINGEN (Germany)

Author keywords

Crystalline amorphous interfaces; Ion implantation; Second harmonic generation; Silicon; Silicon oxides

Indexed keywords

AMORPHOUS MATERIALS; ANISOTROPY; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); SECOND HARMONIC GENERATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE STRUCTURE;

SILICON OXIDES;

ION IMPLANTATION;

EID: 0031642184 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00982-5 Document Type: Article

Times cited : (11)

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