New analytical and scaleable noise model for HFET

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1998, Pages 137-140

  Reuter, R ^a   Tegude, F J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 0031641874     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)