Tailoring of the nitrogen profile in thin gate oxides using substrate nitridation by nitric oxide

Materials Research Society Symposium - Proceedings

Volumn 532, Issue , 1998, Pages 159-164

  Halimaoui, A ^a   Henrisey, E ^a   Hernandez, C ^a   Martins, J ^a   Paoli, M ^a   Regache, M ^a   Vallier, L ^a   Bensahel, D ^a   Blanchard, B ^a   Rouchon, D ^a   Martin, F ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; NITRIFICATION; NITROGEN OXIDES; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN GATE OXIDES;

SEMICONDUCTING SILICON;

EID: 0031639767     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-532-159     Document Type: Conference Paper

References (18)