Strain effect on the growth of 3D In(Ga)As wire structures on InP(001)

Surface Science

Volumn 402-404, Issue , 1998, Pages 268-271

  Phaner Goutorbe, M ^a   Robach, Y ^a   Krapf, P ^a   Solere A ^a   Porte, L ^a  

^a ECOLE CENTRALE DE LYON   (France)

Author keywords

Elastic energy; Group III V semiconductors; Nanostructure; Relaxation; Scanning tunneling microscopy; Strain; Surface growth

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; MONOLAYERS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

INDIUM GALLIUM ARSENIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031639432     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00984-9     Document Type: Article

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