1.3-μm AlGaInAs/InP strained multiple quantum well lasers for high-temperature operation

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 1998, Pages 295-

  Ishikawa, T ^a   Higashi, T ^a   Uchida, T ^a   Yamamoto, T ^a   Fujii, T ^a   Shoji, H ^a   Kobayashi, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CURRENT DENSITY; ENERGY GAP; HIGH TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

BANDGAP; MULTIPLE QUANTUM WELL LASER; RIDGE WAVEGUIDE LASERS; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0031639095     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)