Impedance properties of high-frequency PIN diodes

Solid-State Electronics

Volumn 42, Issue 1, 1998, Pages 121-128

  Lebedev, I V ^a   Shnitnikov, A S ^a   Dyakov, I V ^a   Borisova, N A ^a  

^a MOSCOW POWER ENGINEERING INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; SEMICONDUCTOR DEVICE MODELS;

FREQUENCY-DEPENDENT PROPERTIES; TRANSIT-TIME PHENOMENA;

SEMICONDUCTOR DIODES;

EID: 0031636578     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00258-X     Document Type: Article

References (28)

1. White, J. F., Microwave Semiconductor Engineering, Van Nostrand Reinhold, New York 1982, p.558.
2. Caverly, J. F. and Ma, X., Solid-State Electron., 1989, 32, 329.
3. Heizman, C. L., Proc. IRE, 1961, 49, 829.
4. Bobisch, P. and Sondhauss, C., Int. Electron. Rundschau, 1976, 23, 256.
5. Samsonov, A. V., Radiotechn. i Electron., 1976, 21, 1795. Translated into English in Journal of Communications Technology and Electronics.
6. Samsonov, A. V., Radiotechn. i Electron., 1976, 21, 1795. Translated into English in Journal of Communications Technology and Electronics.
7. Chaffin, R. J., IEEE Trans. Microwave Theory and Techn., 1982, MMT-30, 1944.
8. Lebedev, I. V., Izv. Vuzov. Radioelectron., 1992, 35(10), 17. Translated into English in Radioelectronics and Communications Systems.
9. Lebedev, I. V., Izv. Vuzov. Radioelectron., 1992, 35(10), 17. Translated into English in Radioelectronics and Communications Systems.
10. Lebedev, I. V. and Drozdovski, N. V., Radiotechn. i Electron., 1993, 38, 1696. Translated into English in Journal of Communications Technology and Electronics.
11. Lebedev, I. V. and Drozdovski, N. V., Radiotechn. i Electron., 1993, 38, 1696. Translated into English in Journal of Communications Technology and Electronics.
12. Kurata, M., Solid-State Electron., 1974, 17, 951.
13. Shnitnikov, A. S. and Philatov, N. I., Solid-State Electron., 1991, 34, 91.
14. Chodorow, M. and Susskind, C., Fundamentals of Microwave Electronics, p.270. McGraw-Hill, New York 1964.
15. Birdsall, C. K. and Bridges, W. B., Electron Dynamics of Diode Regions, Acad. Press, New York 1966, p.270.
16. van der Ziel, A., J. Appl. Phys., 1976, 47, 2059.
17. Lebedev, I. V. and Shnitnikov, A. S., Radiotechn. i Electron., 1996, 41, 750. Translated into English in Journal of Communications Technology and Electronics.
18. Lebedev, I. V. and Shnitnikov, A. S., Radiotechn. i Electron., 1996, 41, 750. Translated into English in Journal of Communications Technology and Electronics.
19. Watson, H. A. (Ed.), Microwave Semiconductor Devices and Their Circuit Application, McGraw-Hill, New York 1969 p.617.
20. Vendik, I. B. and Resh, E. A., Radiotechn. i Electron., 1973, 18, 1688. Translated into English in Journal of Communications Technology and Electronics.
21. Vendik, I. B. and Resh, E. A., Radiotechn. i Electron., 1973, 18, 1688. Translated into English in Journal of Communications Technology and Electronics.
22. O'Hearn, W. F. and Chang, Y. F., Solid-State Electron., 1970, 13, 473.
23. Olson, H. M., IEEE Trans. Electron Devices, 1967, ED-14, 418.
24. van der Ziel, A., He, L., van Rhenen, A. D. and Fang, P., Solid-State Electron., 1989, 32, 905.
25. Lebedev, I. V., Shnitnikov, A. S. and Drozdovskaia, L. M., Izv. Vuzov. Radioelectron., 1995, 38(10), 34. Translated into English in Radioelectronics and Communications Systems.
26. Lebedev, I. V., Shnitnikov, A. S. and Drozdovskaia, L. M., Izv. Vuzov. Radioelectron., 1995, 38(10), 34. Translated into English in Radioelectronics and Communications Systems.
27. Lebedev, I. V. and Shnitnikov, A. S., Izv. Vuzov. Radioelectron., 1993, 36(10), 3. Translated into English in Radioelectronics and Communications Systems.
28. Lebedev, I. V. and Shnitnikov, A. S., Izv. Vuzov. Radioelectron., 1993, 36(10), 3. Translated into English in Radioelectronics and Communications Systems.