New encapsulation technique using standard DBC substrates technology

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 1998, Pages 2103-2107

  Carrere, P ^a   Petitbon, A ^a   Changey, N ^a   Ranchy, E ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS; ELECTRIC CONTACTS; ELECTRIC INVERTERS; ELECTRONICS PACKAGING; GATES (TRANSISTOR); POWER CONVERTERS;

POWER ELECTRONICS;

EID: 0031636170     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.1998.703470     Document Type: Conference Paper

References (7)

1. N. Broqua, E. Ranchy and A. Petitbon, Technologies d'assemblage pour intégration hybride de forte puissance, Revue d'Electricité et d'Electronique no 4, 1997, pp 51-61.
2. S. Bontemps, D. Grafham and P. Sable, High speed power modules with integral liquid cooling, Proc. of EPE'97 Trondheim Norway 1997, pp 1200-03.
3. E. Ranchy, A. Petitbon and J. Gonzalez, New encapsulation techniques for 1MW-1to 4kV high power inverters, Proc. of EPE'97 Trondheim Norway 1997, pp 1204-09.
4. S.K. Roy and B.L. Avanie, A very high heat flux microchannel heat exchanger for cooling of semiconductor laser diode arrays, IEEE 1996 Part B vol. 19 no 2, pp 444-51.
5. L. Meysenc et al., A high heat flux IGBT micro exchanger setup, IEEE 1997 Part A vol. 20 no 3, pp 334-41.
6. Alcatel Alsthom French patent no 9707637 on June 19th 1997.
7. P. Jacob et al., IGBT power semiconductor reliability analysis for traction application, Proc. of 5th Internat. Symposium on the physical and failure analysis of integrated circuits, Singapore 1995, IEEE New York, pp 169-75.