The combination of equipment scale and feature scale models for chemical vapor deposition via a homogenization technique

VLSI Design

Volumn 6, Issue 1-4, 1998, Pages 399-403

  Gobbert, Matthias K ^a,b   Cale, Timothy S ^a,c   Ringhofer, Christian A ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c Department of Chemical Engineering ^*  (United States)

Author keywords

Asymptotic Analysis; Chemical Engineering; Chemical Vapor Deposition; Finite Differences; Homogenization; Partial Differential Equations

Indexed keywords

ASYMPTOTIC STABILITY; BOUNDARY CONDITIONS; CHEMICAL VAPOR DEPOSITION; FINITE DIFFERENCE METHOD; MATHEMATICAL MODELS; PARTIAL DIFFERENTIAL EQUATIONS; SURFACE PHENOMENA;

SEMICONDUCTOR MANUFACTURE;

SEMICONDUCTOR GROWTH;

EID: 0031632569     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/24073     Document Type: Article

References (3)

1. T. S. Cale, J.-H. Park, T. H. Gandy, G. B. Raupp, and M. K. Jain. "Step coverage predictions using combined reactor scale and feature scale models for blanket tungsten LPCVD." Chemical Engineering Communications, 119:197-220, 1993.
2. M. K. Gobbert, T. S. Cale, and C. A. Ringhofer. "One approach to combining equipment scale and feature scale models." In M. Meyyappan, D. J. Economou, and S. W. Butler, editors, Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing, pages 553-563, Reno, NV, May 1995. Electrochemical Society, 187th Meeting.
3. M. K. Gobbert and C. A. Ringhofer. "An asymptotic analysis for a model of chemical vapor deposition on a micro structured surface." SIAM Journal on Applied Mathematics, accepted