Degree of crystallinity and strain in B4C and SiC thin films as a function of processing conditions

Materials Research Society Symposium - Proceedings

Volumn 524, Issue , 1998, Pages 109-114

  Hershberger, J ^a   Rek, Z U ^a   Kustas, F ^a   Yalisove, S M ^a   Bilello, J C ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CARBIDE; CRYSTAL STRUCTURE; FILM GROWTH; FOURIER TRANSFORMS; FUNCTIONS; PARTICLE SIZE ANALYSIS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPUTTER DEPOSITION; STRAIN; X RAY ANALYSIS; X RAY SCATTERING;

GRAZING INCIDENCE X RAY SCATTERING (GIXS); RADIAL DISTRIBUTION FUNCTIONS (RDF);

SEMICONDUCTING FILMS;

EID: 0031631577     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-524-109     Document Type: Conference Paper

References (10)