New 3-D lateral power MOSFETs with ultra low on-resistance

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 57-60

  Uesugi, Tsutomu ^a   Kodama, Masahito ^a   Kawaji, Sachiko ^a   Nakashima, Kenji ^a   Murase, Yosie ^a   Hayashi, Eiko ^a   Mitsushima, Yasuichi ^a   Tadano, Hiroshi ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

DRIFT RESISTANCE;

MOSFET DEVICES;

EID: 0031631194     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)