Analysis of Q0-independent single-electron systems

VLSI Design

Volumn 6, Issue 1-4, 1998, Pages 341-344

  Likharev, Konstantin K ^a   Korotkov, Alexander N ^a  

^a STONY BROOK UNIVERSITY   (United States)

Author keywords

Nanoelectronics; Nonvolatile memories; Single electron tunneling

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; NANOSTRUCTURED MATERIALS; RANDOM PROCESSES;

SINGLE ELECTRON DEVICES;

DIGITAL INTEGRATED CIRCUITS;

EID: 0031631008     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/46535     Document Type: Article

References (5)

1. D. V. Averin and K. K. Likharev "Possible applications of the single charge tunneling", in: Single-Charge Tunneling, ed. by H. Grabert and M. H. Devoret, (Plenum, New York, 1992), pp. 311-332.
2. K. K. Likharev, "Correlated discrete transfer of single electrons in ultrasmall tunnel junctions", IBM J. Res. Dev., vol. 32, pp. 144-158, 1988.
3. A. N. Korotkov, R. H. Chen, and K. K. Likharev, "Possible performance of capacitively coupled single-electron transistors in digital circuits", J. Appl. Phys., vol. 78, pp. 2520-2530, 1995.
4. A. N. Korotkov, "Wireless single-electron logic", Appl. Phys. Lett., vol. 67, pp. 2412-2414, 1995.
5. Nonvolatile Semiconductor Memories, ed. by C. Hu (IEEE, New York, 1991).