Novel trench formation and planarization technique using positive etching and CMP for smart power ICs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 367-370

  Kim, Sang Gi ^a   Kim, Jongdae ^a   Lee, Ju Wook ^a   Koo, Jin Gun ^a   Nam, Kee Soo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BROMINE COMPOUNDS; CHEMICAL POLISHING; POWER ELECTRONICS; REACTIVE ION ETCHING; SILICON COMPOUNDS; SURFACE ROUGHNESS;

CHEMICAL MECHANICAL POLISHING (CMP); MAGNETICALLY ENHANCED REACTIVE ION ETCHING (MERIE); PLANARIZATION; ROOT MEAN SQUARE (RMS) VALUE; TRENCH ISOLATION TECHNIQUES; TRENCH REFILL TECHNIQUES;

INTEGRATED CIRCUIT LAYOUT;

EID: 0031630850     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)