Behaviour of luminescent F and F+ centers in sapphire

Proceedings of the International Conference on Electric Charge in Solid Insulators, CSC

Volumn , Issue , 1998, Pages 539-541

  Jardin, C ^a   Martinez, L ^a   Ghamnia, M ^a   Durupt, P ^a  

^a UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTALS; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN OF SOLIDS; ION BOMBARDMENT; LUMINESCENCE OF SOLIDS; RADIATION EFFECTS; SAPPHIRE;

ELECTRON TRAPS; LUMINESCENCE BAND;

DIELECTRIC MATERIALS;

EID: 0031629988     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)