Anisotropic tunneling in InGaAsP/InP multi-quantum barrier structure

Solid State Communications

Volumn 105, Issue 4, 1998, Pages 279-282

  Liaci, Fabio ^a   Greco, Donato ^a   Cingolani, Roberto ^a   Campi, Domenico ^b   Rigo, Cesare ^b   Soldani, Domenico ^b  

^a UNIVERSITY OF SALENTO   (Italy)

^b Ctro Studi Laboratori T   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

BAND FILLING; DIAMAGNETIC SHIFT; HIGH RESOLUTION X RAY DIFFRACTION; MAGNETOPHOTOLUMINESCENCE; QUATERNARY ALLOY;

HETEROJUNCTIONS;

EID: 0031629669     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10109-0     Document Type: Article

References (7)

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