20-V P-channel with 650 μΩ-cm2 at VGS = 2.7 V: Overcoming FPI breakdown in high-channel-conductance low-Vt TrenchFETs

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 411-414

  Williams, Richard K ^a   Grabowski, Wayne ^a   Berwick, Jeff ^a   Darwish, Mohamed ^a   Chang, Mike ^a  

^a Siliconix Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC EQUIPMENT PROTECTION; ELECTRIC RESISTANCE MEASUREMENT; POWER ELECTRONICS; THRESHOLD VOLTAGE;

CHANNEL CONDUCTANCE; TRENCH FIELD EFFECT TRANSISTORS;

GATES (TRANSISTOR);

EID: 0031629495     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)