A hot-hole transport model based on spherical harmonics expansion of the anisotropic bandstructure

VLSI Design

Volumn 6, Issue 1-4, 1998, Pages 205-208

  Kosina, H ^a   Harrer, M ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Hot Carrier; Modeling; Monte Carlo Method; Semiconductor; Transport; Valence Band

Indexed keywords

ALGORITHMS; ANISOTROPY; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; MATHEMATICAL MODELS; MONTE CARLO METHODS;

HOLE TRANSPORT;

BAND STRUCTURE;

EID: 0031628729     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/83430     Document Type: Article

References (4)

1. K. Seeger, Semiconductor Physics. Springer. 1989.
2. C. Jacoboni and L. Reggiani, "The Monte Carlo Method for the Solution of Charge Transport in Semiconductors with Applications to Covalent Materials," Rev.Mod.Phys., vol. 55, no. 3, pp. 645-705, 1983.
3. W. Vetterling and S. Teukolsky, Numerical Recipes. Cambridge University Press, 1986.
4. C. Canali, G. Ottaviani, and A. Quaranta, "Drift Velocity of Electrons and Holes and Associated Anisotropic Effects in Silicon," J.Phys.Chem.Solids, vol. 32, no. 8, pp. 1707-1720, 1971.