Novel 6.4 μm2 full-CMOS SRAM cell with aspect ratio of 0.63 in a high-performance 0.25 μm-generation CMOS technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 68-69

  Kim, K J ^a   Youn, J M ^a   Kim, S B ^a   Kim, J H ^a   Hwang, S H ^a   Kim, K T ^a   Shin, Y S ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT;

STATIC RANDOM ACCESS MEMORY (SRAM);

RANDOM ACCESS STORAGE;

EID: 0031624839     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)