SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 402-404, Issue , 1998, Pages 742-745

Band structure and gap opening in Pb/Ge(111)

(4) Mascaraque, A a Avila, J b Asensio, M C c Michel, E G a

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

b UNIVERSITÉ PARIS SACLAY (France)

c INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

Author keywords

Angle resolved photoemission; Germanium; Lead; Low index single crystal surfaces; Metal semiconductor interfaces; Semiconducting surfaces; Single crystal epitaxy; Surface electronic phenomena

Indexed keywords

BAND STRUCTURE; FERMI LEVEL; INTERFACES (MATERIALS); LEAD; PHOTOEMISSION; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE STRUCTURE;

ANGLE RESOLVED PHOTOEMISSION;

SEMICONDUCTING GERMANIUM;

EID: 0031622028 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)01003-0 Document Type: Article

Times cited : (6)

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