Effect of UV/photoelectron and photocatalyst cleaning on the reliability of thin gate oxides

Institute of Environmental Sciences - Proceedings, Annual Technical Meeting

Volumn , Issue , 1998, Pages 210-214

  Yokoyama, S ^a   Tobimatsu, H ^a   Fujii, T ^a   Shibahara, K ^a   Hirose, M ^a   Sakamoto, K ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CONTAMINATION; DIELECTRIC PROPERTIES; DISSOCIATION; ELECTRIC BREAKDOWN; OXIDES; PHOTOELECTRON SPECTROSCOPY; RELIABILITY; SILICON WAFERS; ULTRAVIOLET RADIATION;

GASEOUS CONTAMINATION; PHOTOCATALYSTS; THIN GATE OXIDES; TIME DEPENDENT DIELECTRIC BREAKDOWN;

CLEANING;

EID: 0031621578     PISSN: 00739227     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)