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Volumn 278-281, Issue PART 2, 1998, Pages 612-617
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Evolution of disordering in SiC under high pressure high temperature conditions: In-situ powder diffraction study
a a a a a b b c d |
Author keywords
Compressibility; High Pressure Diffraction; Polytypism; Silicon Carbide
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Indexed keywords
COMPRESSIBILITY;
GRAIN SIZE AND SHAPE;
INDIUM COMPOUNDS;
LATTICE CONSTANTS;
NANOCRYSTALS;
POLYCRYSTALS;
POWDERS;
X RAY DIFFRACTION;
ANNEALING;
HIGH PRESSURE EFFECTS;
HIGH TEMPERATURE EFFECTS;
NANOSTRUCTURED MATERIALS;
STACKING FAULTS;
STRAIN;
STRESS RELAXATION;
THERMAL EXPANSION;
HIGH PRESSURE HIGH TEMPERATURE;
HIGH-PRESSURE DIFFRACTION;
IN-SITU X-RAY DIFFRACTION;
ISOSTATIC PRESSURE;
NANOCRYSTALLINE SAMPLE;
POLYTYPISM;
SITU POWDER DIFFRACTIONS;
X RAY DIFFRACTION PROFILE;
SILICON CARBIDE;
POLYTYPISM;
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EID: 0031620603
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Article |
Times cited : (10)
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References (15)
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