Deuterium process of CMOS devices: New phenomena and dramatic improvement

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 180-181

  Chen, Zhi ^a   Lee, Jinju ^a   Lyding, Joseph W ^a   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; DEUTERIUM; ELECTRIC FIELD EFFECTS; HYDROGEN; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

DEGRADATION POWER LAW;

CMOS INTEGRATED CIRCUITS;

EID: 0031619815     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)