Failure mode of different irradiated power IGBT structures

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1998, Pages 516-519

  Lorfevre, Eric ^a   Dachs, Charles ^a   Detcheverry, Celine ^a   Sudre, Christophe ^a   Roubaud, Frank ^a   Palau, Jean Marie ^a   Gasiot, Jean ^a   Calvet, Marie Catherine ^a   Ecoffet, Robert ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; FAILURE ANALYSIS; HEAVY IONS; ION BOMBARDMENT; MOSFET DEVICES; POWER ELECTRONICS; THYRISTORS; TWO DIMENSIONAL;

INSULATED GATE BIPOLAR TRANSISTORS; NON PUNCH THROUGH STRUCTURE; POWER SWITCHING DEVICES; PUNCH THROUGH STRUCTURE;

RADIATION EFFECTS;

EID: 0031619064     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)