New power MOSFET model including the variation of parameters with the temperature

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Volumn , Issue , 1998, Pages 261-266

  Leonardi, C ^a   Raciti, A ^a   Frisina, F ^a   Letor, R ^a   Musumeci, S ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK ANALYSIS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; POWER ELECTRONICS; SUBSTRATES; TEMPERATURE;

DYNAMIC VALIDATION TESTS; SUBCIRCUIT MODEL;

MOSFET DEVICES;

EID: 0031617971     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)