Low-temperature epitaxy and transient diffusion mechanisms on Cu(100)

Europhysics Letters

Volumn 40, Issue 4, 1997, Pages 453-457

  Yue, Y ^a   Ho, Y K ^a,b   Pan, Z Y ^a  

^a FUDAN UNIVERSITY   (China)

^b CCAST WORLD LABORATORY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031573271     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1997-00487-7     Document Type: Article

References (22)

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22. Yu and Scheffler in a recent publication (Phys. Rev. Lett., 77 (1996) 1095) indicated that by using density functional theory to calculate the diffusion barrier and bonding energy on flat and stepped Ag (100), they found that while across step edges, the diffusion that proceeds by an exchange process is favored. This is consistent with our ICD mechanism.