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Volumn 40, Issue 4, 1997, Pages 453-457

Low-temperature epitaxy and transient diffusion mechanisms on Cu(100)

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[No Author keywords available]

Indexed keywords


EID: 0031573271     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1997-00487-7     Document Type: Article
Times cited : (3)

References (22)
  • 6
    • 25544468271 scopus 로고
    • GILMORE C. M. and SPRAGUE J. A., J. Vacuum Sci. Technol. A, 13 (1995) 1160; Phys. Rev. B, 44 (1991) 8950. Phys. Rev. B, 44 (1991) 8950.
    • (1991) Phys. Rev. B , vol.44 , pp. 8950
  • 11
    • 0004199617 scopus 로고
    • edited by M. A. VAN HOVE, S. Y. TONG and X. XIDE (Springer, Berlin)
    • SANDERS D. E. and EVANS J. W., in Structure of Surfaces III, edited by M. A. VAN HOVE, S. Y. TONG and X. XIDE (Springer, Berlin) 1991.
    • (1991) Structure of Surfaces III
    • Sanders, D.E.1    Evans, J.W.2
  • 22
    • 4243511229 scopus 로고    scopus 로고
    • indicated that by using density functional theory to calculate the diffusion barrier and bonding energy on flat and stepped Ag (100), they found that while across step edges, the diffusion that proceeds by an exchange process is favored. This is consistent with our ICD mechanism
    • Yu and Scheffler in a recent publication (Phys. Rev. Lett., 77 (1996) 1095) indicated that by using density functional theory to calculate the diffusion barrier and bonding energy on flat and stepped Ag (100), they found that while across step edges, the diffusion that proceeds by an exchange process is favored. This is consistent with our ICD mechanism.
    • (1996) Phys. Rev. Lett. , pp. 1095
    • Yu1    Scheffler2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.