메뉴 건너뛰기




Volumn 33, Issue 21, 1997, Pages 1822-1823

RF small-signal equivalent circuit of MQW InGaAs/InAIAs electroabsorption modulator

Author keywords

Electroabsorption modulators; Equivalent circuits

Indexed keywords

CALIBRATION; ELECTRIC IMPEDANCE MEASUREMENT; EQUIVALENT CIRCUITS; OPTICAL VARIABLES MEASUREMENT; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0031561231     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971216     Document Type: Article
Times cited : (5)

References (4)
  • 1
    • 0031119759 scopus 로고    scopus 로고
    • Full-duplex 25km analogue fibre transmission at 120Mbit/s with simultaneous modulation and detection in an electroabsorption modulator
    • WESTBROOK, L.D., NOEL, L., and MOODIE, D.G.: 'Full-duplex 25km analogue fibre transmission at 120Mbit/s with simultaneous modulation and detection in an electroabsorption modulator', Electron. Lett., 1997, 33, (8), pp. 694-695
    • (1997) Electron. Lett. , vol.33 , Issue.8 , pp. 694-695
    • Westbrook, L.D.1    Noel, L.2    Moodie, D.G.3
  • 2
    • 3242835261 scopus 로고    scopus 로고
    • Enhanced electroabsorption in tensile-strained GaInAs/AlInAs/ InP quantum well structures, due to field-induced merging of lighthole and heavy-hole transitions
    • SCHWANDER, T., ANHEGGER, M., BÜRGER, N., FEIFEL, T., HIRCHE, K., KORN, M., PANZLAFF, K., SCHRÖTER, S., WARTH, M., and KÖNIG, P.: 'Enhanced electroabsorption in tensile-strained GaInAs/AlInAs/ InP quantum well structures, due to field-induced merging of lighthole and heavy-hole transitions', Appl. Phys. Lett., 1997, 70, (21), pp. 2855-2857
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.21 , pp. 2855-2857
    • Schwander, T.1    Anhegger, M.2    Bürger, N.3    Feifel, T.4    Hirche, K.5    Korn, M.6    Panzlaff, K.7    Schröter, S.8    Warth, M.9    König, P.10
  • 3
    • 0029546269 scopus 로고
    • Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulators
    • IDO, T., SANO, H., TANAKA, S., and INOUE, H.: 'Frequency-domain measurement of carrier escape times in MQW electro-absorption optical modulators', IEEE Photonics Technol. Lett., 1995, 7, (12), pp. 1421-1423
    • (1995) IEEE Photonics Technol. Lett. , vol.7 , Issue.12 , pp. 1421-1423
    • Ido, T.1    Sano, H.2    Tanaka, S.3    Inoue, H.4
  • 4
    • 0029342430 scopus 로고
    • Electro-absorption modulators for high-bit-rate optical communications: A comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP MQW
    • DEVAUX, F., CHELLES, S., OUGAZZADEN, A., MIRCEA, A., and HARMAND, J.C.: 'Electro-absorption modulators for high-bit-rate optical communications: A comparison of strained InGaAs/InAlAs and InGaAsP/InGaAsP MQW', Semicond. Sci. Technol., 1995, 10, pp. 887-901
    • (1995) Semicond. Sci. Technol. , vol.10 , pp. 887-901
    • Devaux, F.1    Chelles, S.2    Ougazzaden, A.3    Mircea, A.4    Harmand, J.C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.