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Volumn 70, Issue 23, 1997, Pages 3152-3154

High-Tc edge junctions with Y0.8Pr0.2Ba2Cu2.7Co 0.3O7-δ barrier layers near the metal-insulator transition

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL CURRENTS; ELECTRIC CONDUCTIVITY; MATHEMATICAL MODELS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

EID: 0031560897     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119117     Document Type: Article
Times cited : (8)

References (17)
  • 17
    • 0000057865 scopus 로고
    • Y. X. Jia, J. Z. Liu, M. D. Lan, P. Klavins, R. N. Shelton, and H. B. Radousky, Physica C 185-189, 769 (1991); Wu Jiang, J. L. Peng, S. J. Hagen, and R. L. Greene, Phys. Rev. B 46, 8694 (1992).
    • (1992) Phys. Rev. B , vol.46 , pp. 8694
    • Jiang, W.1    Peng, J.L.2    Hagen, S.J.3    Greene, R.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.