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Volumn 70, Issue 23, 1997, Pages 3152-3154
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High-Tc edge junctions with Y0.8Pr0.2Ba2Cu2.7Co 0.3O7-δ barrier layers near the metal-insulator transition
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Author keywords
[No Author keywords available]
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Indexed keywords
CRITICAL CURRENTS;
ELECTRIC CONDUCTIVITY;
MATHEMATICAL MODELS;
METAL INSULATOR BOUNDARIES;
SEMICONDUCTOR DOPING;
TUNNEL JUNCTIONS;
BARRIER LAYERS;
DIFFUSION CONSTANT;
EDGE JUNCTIONS;
METAL INSULATOR TRANSITION;
TEMPERATURE DEPENDENCE;
JOSEPHSON JUNCTION DEVICES;
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EID: 0031560897
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.119117 Document Type: Article |
Times cited : (8)
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References (17)
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