The energy spectra of narrow-gap semiconductor heterostructures: Spin splitting in the case of asymmetry

Journal of Physics Condensed Matter

Volumn 9, Issue 49, 1997, Pages 10929-10939

  Kolesnikov, A V ^a,b   Silin, A P ^c  

^a LANDAU INSTITUTE FOR THEORETICAL PHYSICS   (Russian Federation)

^b HAHN MEITNER INSTITUT   (Germany)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ASYMMETRIC HETEROSTRUCTURE; CONDUCTION BAND; ENERGY SPECTRUM; SPIN SPLITTING; VALENCE BAND;

HETEROJUNCTIONS;

EID: 0031560336     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/9/49/012     Document Type: Article

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