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Volumn 33, Issue 10, 1997, Pages 904-906

High speed, high current driver for operation with low ohmic load

Author keywords

Pulse generators; Semiconductor junction lasers

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTOR LASERS; TRANSISTORS;

EID: 0031559320     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970564     Document Type: Article
Times cited : (15)

References (9)
  • 1
    • 0021411184 scopus 로고
    • Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection
    • SCHOLL, E., BIMBERG, D., SCHUMACHER, H., and LANDSBERG, P.T.: 'Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection', IEEE J. Quantum Electron., 1984, 2, (4), pp. 394-399
    • (1984) IEEE J. Quantum Electron. , vol.2 , Issue.4 , pp. 394-399
    • Scholl, E.1    Bimberg, D.2    Schumacher, H.3    Landsberg, P.T.4
  • 3
    • 0013393296 scopus 로고
    • Subnanosecond current drops in delayed breakdown of silicon p-n junctions
    • GREKHOV, I.V., and KARDO-SYSOEV, A.F.: 'Subnanosecond current drops in delayed breakdown of silicon p-n junctions', Sov. Tech. Phys. Lett., 1979, 5, (8), pp. 395-396
    • (1979) Sov. Tech. Phys. Lett. , vol.5 , Issue.8 , pp. 395-396
    • Grekhov, I.V.1    Kardo-Sysoev, A.F.2
  • 4
    • 0041035656 scopus 로고
    • Computer model study of the process of switching of a reverse-biased p-n junction to high conductivity state
    • BILENKO, YU.D., LEVINSHTEIN, M.E., POPOVA, M.V., and YUFEREV, V.S.: 'Computer model study of the process of switching of a reverse-biased p-n junction to high conductivity state', Sov. Phys. Semicond., 1983, 17, (10), pp. 1153-1156
    • (1983) Sov. Phys. Semicond. , vol.17 , Issue.10 , pp. 1153-1156
    • Bilenko, Yu.D.1    Levinshtein, M.E.2    Popova, M.V.3    Yuferev, V.S.4
  • 5
    • 0043228517 scopus 로고
    • Visualisation of subnanosecond switching of gallium arsenide diode structures
    • VAINSHTEIN, S.N., ZHILYAEV, YU.V., and LEVINSHTEIN, M.E.: 'Visualisation of subnanosecond switching of gallium arsenide diode structures', Sov. Tech. Phys. Lett., 1988, 14, (8), pp. 664-665
    • (1988) Sov. Tech. Phys. Lett. , vol.14 , Issue.8 , pp. 664-665
    • Vainshtein, S.N.1    Zhilyaev, Yu.V.2    Levinshtein, M.E.3
  • 6
    • 3242817942 scopus 로고    scopus 로고
    • Automatic switching synchronisation of serial and parallel avalanche transistor connections
    • VAINSHTEIN, S.N., KOSTAMOVAARA, J.T., MYLLYLÄ, R.A., KILPELÄ, A.J., and MääTTä, K.E.A.: 'Automatic switching synchronisation of serial and parallel avalanche transistor connections', Electron. Lett., 1996, 32, (11), pp. 950-952
    • (1996) Electron. Lett. , vol.32 , Issue.11 , pp. 950-952
    • Vainshtein, S.N.1    Kostamovaara, J.T.2    Myllylä, R.A.3    Kilpelä, A.J.4    Määttä, K.E.A.5
  • 8
    • 0030365027 scopus 로고    scopus 로고
    • Subnanosecond high current switching with low - Ohmic load by application of drift - step recovery diode
    • Ames, Iowa, USA, 18-21 August
    • VAINSHTEIN, S., KOSTAMOVAARA, J., MÄÄTTÄ, K., and KILPELÄ, A.: 'Subnanosecond high current switching with low - ohmic load by application of drift - step recovery diode'. Midwest Symp. Circuits Systems, Ames, Iowa, USA, 18-21 August 1996
    • (1996) Midwest Symp. Circuits Systems
    • Vainshtein, S.1    Kostamovaara, J.2    Määttä, K.3    Kilpelä, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.