The stability of electrical parameters of CdTe layers produced by metal-organic chemical vapour deposition

Journal of Physics D: Applied Physics

Volumn 30, Issue 23, 1997, Pages 3203-3210

  Lisiansky, M ^a   Korchnoi, V ^a   Nemirovsky, Y ^a   Weil, R ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; ULTRASONIC EFFECTS;

CADMIUM TELLURIDE; ELECTRIC PARAMETER STABILITY;

SEMICONDUCTING FILMS;

EID: 0031558874     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/30/23/004     Document Type: Article

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