Determination of interface layer strain of Si/SiO2 interfaces by reflectance difference spectroscopy

Applied Physics Letters

Volumn 71, Issue 1, 1997, Pages 87-89

  Yang, Z ^a   Chen, Y H ^a,d   Ho, Jacob Y L ^a   Liu, W K ^b,e   Fang, X M ^c   McCann, P J ^c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF OKLAHOMA   (United States)

^c University of Oklahoma   (United States)

^d INSTITUTE OF SEMICONDUCTORS   (China)

^e Quantum Epitaxial Designs Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; HYDROSTATIC PRESSURE; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

REFLECTANCE DIFFERENCE SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 0031558193     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119477     Document Type: Article

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