Photon emission in deep submicron Si n-MOSFET

Electronics Letters

Volumn 33, Issue 23, 1997, Pages 1990-1992

  Szelag, B ^a   Balestra, F ^a  

^a NONE

Author keywords

MOSFET; Photoemission

Indexed keywords

ELECTRIC CURRENTS; PHOTOEMISSION; PHOTONS; SEMICONDUCTING SILICON; SUBSTRATES;

LOW VOLTAGE OPERATIONS;

MOSFET DEVICES;

EID: 0031556569     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971304     Document Type: Article

References (8)

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4. TORIUMI, A., YOSHIMI, M., IWASE, M., AKIYAMA, Y., and TANIGUCHI, K.: 'A Study of photon emission from n-channel MOSFETs', IEEE Trans. Electron. Devices, 1987, 34, (7), pp. 1502-1508
5. HERZOG, M., and KOCH, F.: 'Hot carrier light emission from silicon metal-oxide-semiconductor devices', Appl. Phys. Lett., 1988, 53, pp. 2620-2622
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8. WONG, H.S.: 'Experimental verification of the mechanism of hot carrier induced photon emission in n-MOSFETs using an overlapping CCD gate structure', IEEE Electron. Device Lett., 1992, 13, (8), pp. 389-391