Characteristics of Ni/n-AgInSe2 polycrystalline thin film Schottky barrier diodes

Thin Solid Films

Volumn 292, Issue 1-2, 1997, Pages 290-292

  Ramesh, P Paul ^a   Uthanna, S ^a   Naidu, B Srinivasulu ^a   Reddy, P Jayarama ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

Electrical properties and measurements; Electronic devices; Schottky barrier; Semiconductors

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC EQUIPMENT; NICKEL; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; THIN FILMS;

POLYCRYSTALLINE THIN FILM SCHOTTKY BARRIER DIODES; SILVER MEDIUM SELENIDE;

SCHOTTKY BARRIER DIODES;

EID: 0031553504     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08947-X     Document Type: Article

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