Electron transfer rate constants for majority electrons at GaAs and GaInP2 semiconductor-liquid interfaces

Journal of Physical Chemistry B

Volumn 101, Issue 36, 1997, Pages 7038-7042

  Meier, Andreas ^a   Kocha, Shyam S ^a   Hanna, Mark C ^a   Nozik, Arthur J ^a   Siemoneit, Kerstin ^b   Reineke Koch, Rolf ^b   Memming, Rüdiger ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE MEASUREMENT; ELECTROCHEMICAL ELECTRODES; ELECTROLYTES; IONS; PHASE INTERFACES; REACTION KINETICS; REDOX REACTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

COBALTOCENIUM COBALTOCENE;

CHARGE TRANSFER;

EID: 0031552911     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp9714882     Document Type: Article

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