Intrinsic modulation bandwidth of strained GalnP/AIGaInP quantum well lasers

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 650-652

  Moritz, A ^a   Wirth, R ^a   Heppel, S ^a   Geng, C ^a   Kuhn, J ^a   Schweizer, H ^a   Scholz, F ^a   Hangleiter, A ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DENSITY (OPTICAL); MATHEMATICAL MODELS; MIRRORS; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CATASTROPHIC OPTICAL DAMAGE; INTRINSIC MODULATION BANDWIDTH; OPTICAL GAIN;

QUANTUM WELL LASERS;

EID: 0031552813     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119818     Document Type: Article

References (12)

1. P. Mortensen, Laser Focus World, 36 (1995).
2. R. Sah, J. Ralston, E. Larkins, I. Esquivias, P. Tasker, J. Fleissner, and J. Rosenzweig, Electron. Lett. 28, 2146 (1995).
3. K. Y. Lau and A. Yariv, IEEE J. Quantum Electron. 21, 121 (1985).
4. A. Gomyo, T. Suzuki, and S. Iijima, Phys. Rev. Lett. 60, 2645 (1988).
5. C. Geng, M. Moser, R. Winterhoff, E. Lux, J. Hommel, B. Höhing, H. Schweizer, and F. Scholz, J. Cryst. Growth 145, 740 (1994).
6. A. Grabmaier, A. Hangleiter, G. Fuchs, J. Whiteaway, and R. Glew, 59, 3024 (1991).
7. E. P. O'Reilly, Semicond. Sci. Technol. 4, 121 (1989).
8. A. Moritz and A. Hangleiter, Appl. Phys. Lett. 66, 3340 (1995).
9. R. Olshansky, P. Hill, V. Lanzisera, and W. Powazinik, IEEE J. Quantum Electron. 23, 1410 (1987).
10. R. Nagarajan, M. Ishikawa, T. Fukushima, R. Geels, and J. Bowers, IEEE J. Quantum Electron. 28, 1990 (1992).
11. M. Zimmermann, S. Krämer, A. Hangleiter, F. Steinhagen, H. Hillmer, and H. Burkhard, Appl. Phys. Lett. 69, 2324 (1996).
12. H. Fuji, Y. Ueno, and K. Endo, Appl. Phys. Lett. 62, 2114 (1992).