Low operating current and high temperature operation of 650nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1223-1225

  Imafuji, O ^a   Yuri, M ^a   Hashimoto, T ^a   Ishida, M ^a   Mannoh, M ^a   Kawata, T ^a   Ogawa, H ^a   Yoshikawa, A ^a   Itoh, K ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Refractive index; Semiconductor junction lasers

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH TEMPERATURE OPERATIONS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT BLOCKING LAYERS;

SEMICONDUCTOR LASERS;

EID: 0031551209     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970832     Document Type: Article

References (8)

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2. TAKAYAMA, T., IMAFUJI, O., SUGIURA, H., YURI, M., NAITO, H., KUME, M., and ITOH, K.: 'Low-noise and high-power GaAlAs laser diodes with a new real index guided structure', Jpn. J. Appl. Phys., 1995, 34, pp. 3533-3542
3. KAMIYAMA, S., UENOYAMA, T., MANNOH, M., BAN, Y., and OHNAKA, K.: 'Analysis of GaInP/AlGaInP compressive strained multiple-quantum well laser', IEEE J. Quantum. Electron., 1994, 30, pp. 1363-1369
4. KIDOGUCHI, I., ADACHI, H., FUKUHISA, T., MANNOH, M., and TAKAMORI, A.: 'Stable operation of self-sustained pulsation in 650 nm-band AlGaInP visible lasers with highly doped saturable absorbing layer', Appl. Phys. Lett., 1996, 68, pp. 3543-3545
5. HATAKOSHI, G., NITTA, K., ITAYA, K., NISHIKAWA, Y., ISHIKAWA. M., and OKAJIMA, M.: 'High-power InGaAlP laser diodes for high density optical recording', Jpn. J. Appl. Phys., 1992, 31, pp. 501-507
6. 0.5InP heterostructures and quantum-well laser diodes', IEEE J. Quantum. Electron., 1994, 30, pp. 593-607
7. SUN, D., TREAT, D.W., and BOUR, D.P.: 'High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode', Electron. Lett., 1996, 32, pp. 1488-1489
8. KOBAYASHI, R., HOTTA, H., MIYASAKA, F., HARA, K., and KOBAYASHI, K.: 'Real index-guided AlGaInP visible laser with high-bandgap energy AlInP current blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy', IEEE J. Quantum. Electron., 1995, 1, pp. 723-727