Deposition of c⊥-oriented tungsten disulfide (WS2) films by reactive DC magnetron sputtering from a W-target in Ar/H2S

Journal of Crystal Growth

Volumn 182, Issue 3-4, 1997, Pages 389-393

  Ellmer, K ^a   Stock, C ^a   Diesner, K ^a   Sieber, I ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Compound semiconductor; Reactive magnetron sputtering; Surfactant; Thin film deposition; Tungsten disulfide; WS2

Indexed keywords

ABSORPTION; ENERGY GAP; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR GROWTH; SOLAR CELLS; SUBSTRATES; SURFACE ACTIVE AGENTS; THIN FILMS; VAN DER WAALS FORCES; X RAY DIFFRACTION ANALYSIS;

TUNGSTEN DISULFIDE;

TUNGSTEN COMPOUNDS;

EID: 0031549953     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00355-2     Document Type: Article

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