Growth and characterization of Bi-doped PbS thin films prepared by hot-wall epitaxy

Journal of Crystal Growth

Volumn 181, Issue 4, 1997, Pages 367-373

  Abe, S ^a   Masumoto, K ^a   Suto, K ^b  

^a Research Institute of Electric and Magnetic Alloys Sendai   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); HOT WALL EPITAXY;

THIN FILMS;

EID: 0031549803     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00301-1     Document Type: Article

References (25)

1. K. Masumoto, N. Koguchi, S. Takahashi, T. Kiyosawa, I. Nakatani, Sci. Rep. Nat. Res. Inst. Metals 6 (1985) 101.
2. S. Shibata, M. Horiguchi, K. Jinguji, S. Mitachi, T. Kanamori, T. Manabe, Electron. Lett. 17 (1981) 775.
3. N. Koguchi, T. Kiyosawa, S. Takahashi, J. Crystal Growth 81 (1987) 400.
4. A. Ishida, N. Sakurai, K. Aikawa, H. Fujiyasu, Solid State Electron. 37 (1994) 1141.
5. N. Koguchi, S. Takahashi, Appl. Phys. Lett. 58 (1991) 799.
6. S. Abe, K. Masumoto, K. Suto, J. Crystal Growth 173 (1997) 104.
7. S. Abe, K. Masumoto, K. Mochizuki, K. Suto, J. Crystal Growth 144 (1994) 54.
8. J.N. Walpole, R.L. Guldi, Physics of IV-VI Compounds and Alloys, Gordon and Breach, London, 1974.
9. D.L. Partin, Semiconductors Semimetals 33 (1991) 311.
10. M.S. Seltzer, J.B. Wagner Jr., J. Phys. Chem. Solids 24 (1963) 1525.
11. K.R. Zanio, J.B. Wagner, J. Appl. Phys. 39 (1968) 5686.
12. J. Bloem, Phil. Res. Rep. 11 (1956) 273.
13. J. Bloem, F.A. Kröger, H.J. Vink, Rep. Bristol Conf. on Defects in Crystalline Solids, vol. 1954, 1955, p. 273.
14. K. Igaki, N. Ohashi, Bull. Univ. Osaka Pref. A 11 (1962) 89.
15. R.B. Barmes, M. Czerny, Phys. Rev. 38 (1931) 338.
16. J.I. Pankove, Optical Processes in Semiconductors, Dover, New York, 1971, p. 74.
17. Y. Fan, M. Becker, in: Semiconductor Materials, Butterworth, London, 1951, p. 132.
18. S. Visvanathan, Phys. Rev. 120 (1960) 376.
19. H.Y. Fan, W.G. Spitzer, R.J. Collins, Phys. Rev. 101 (1956) 566.
20. T.C. Harman, A.J. Strauss, J. Electron. Mater. 5 (1976) 621.
21. B. Salanci, G.H. Moh, Neues Jahrb. Mineral. Abhandl. 112 (1969) 63.
22. V.A. Zykov, T.A. Gavrikova, S.A. Nemov, Fiz. Tech. Poluprovodn. 29 (1995) 309.
23. E. Burstein, Phys. Rev. 93 (1954) 632.
24. H. Preier, Appl. Phys. 20 (1979) 189.
25. T.E. Thompson, P.R. Aron, B.S. Chandrasekhar, D.N. Langenberg, Phys. Rev. B 4 (1971) 518.