![]() |
Volumn 117-118, Issue , 1997, Pages 765-770
|
Initial domain structure of GaAs thin films grown on Si(001) substrates
c
NTT CORPORATION
(Japan)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CHEMICAL POLISHING;
EPITAXIAL GROWTH;
FILM GROWTH;
PLASMA APPLICATIONS;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
SILICON WAFERS;
SUBSTRATES;
SURFACE CLEANING;
THIN FILMS;
X RAY ANALYSIS;
MECHANOCHEMICAL POLISHING;
PLASMA CLEANING;
X RAY STANDING WAVE MEASUREMENTS;
SEMICONDUCTING GALLIUM ARSENIDE;
|
EID: 0031548792
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(97)80179-1 Document Type: Article |
Times cited : (3)
|
References (15)
|