Method for fabricating submicron suicide structures on silicon using a resistless electron beam lithography process

Applied Physics Letters

Volumn 70, Issue 22, 1997, Pages 3020-3022

  Drouin, D ^a   Beauvais, J ^a   Lemire, R ^a   Lavallee E ^a   Gauvin, R ^a   Caron, M ^b  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AUGER ELECTRON SPECTROSCOPY; ETCHING; INTERFACES (MATERIALS); PLATINUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; THIN FILMS;

AQUA REGIA; PROXIMITY EFFECTS; RESISTLESS LITHOGRAPHY; SILICIDES;

ELECTRON BEAM LITHOGRAPHY;

EID: 0031548696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118736     Document Type: Article

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