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Volumn 117-118, Issue , 1997, Pages 88-93

Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane

(3) Takakuwa, Yuji a Mazumder, Motaharul Kabir a,b Miyamoto, Nobuo a,c

a TOHOKU UNIVERSITY (Japan)

b MITSUBISHI ELECTRIC CORPORATION (Japan)

c TOHOKU GAKUIN UNIVERSITY (Japan)

Author keywords

Crystallographic defect; Si CVD; SiH 2 Cl 2; Surface adsorbate; Surface morphology

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); MORPHOLOGY; NUCLEATION; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SILANES; STACKING FAULTS; SURFACE STRUCTURE; THERMAL EFFECTS;

DICHLOROSILANES; SURFACE ADSORBATES;

SEMICONDUCTING SILICON;

EID: 0031548385 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)80057-8 Document Type: Article

Times cited : (4)

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