Properties of depth-profile controlled boron nitride films prepared by ion-beam assisted deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 977-980

  Kumagai, M ^a   Suzuki, M ^a   Suzuki, T ^b   Tanaka, Y ^b   Setsuhara, Y ^b   Miyake, S ^b   Ogata, K ^c   Kohata, M ^d   Higeta, K ^e   Einishi, T ^f   Suzuki, Y ^g   Shimoitani, Y ^h   Motonami, Y ⁱ  

^a Kanagawa High Technology Foundation   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NISSIN ELECTRIC CO LTD   (Japan)

^d Toshiba Tungaloy Co Ltd   (Japan)

^e Chugai Ro Co Ltd   (Japan)

^f Isuzu Glass Co Ltd   (Japan)

^g Konica Corporation   (Japan)

^h Alloy Industries Ltd   (Japan)

ⁱ Starloy Industries Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; CORROSION PROTECTION; FILM PREPARATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE OPERATIONS; ION BOMBARDMENT; NITROGEN; SILICON WAFERS; SUBSTRATES; THERMODYNAMIC STABILITY; TUNGSTEN CARBIDE;

BORON NITRIDE FILMS; ION BEAM ASSISTED DEPOSITION (IBAD);

CUBIC BORON NITRIDE;

EID: 0031547933     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00042-6     Document Type: Article

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