Influence of impurities (nitrogen, oxygen) on Er-related emission in gallium phosphide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 541-544

  Uekusa, S ^a   Yano, Y ^a   Fukaya, K ^a   Kumagai, M ^b  

^a MEIJI UNIVERSITY   (Japan)

^b Kanagawa High Technology Foundation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; CRYSTAL IMPURITIES; ENERGY TRANSFER; ERBIUM; ION IMPLANTATION; NITROGEN; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

SEMICONDUCTING GALLIUM PHOSPHIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031547877     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00077-3     Document Type: Article

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