Donor activity of ion-implanted erbium in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 479-482

  Palmetshofer, L ^a   Suprun Belevich, Yu ^a,b   Stepikhova, M ^a,c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; COMPOSITION EFFECTS; ERBIUM; HALL EFFECT; ION IMPLANTATION; LUMINESCENCE; MAGNETIC FIELD MEASUREMENT; OXYGEN; SEMICONDUCTOR DOPING; SULFUR;

DONOR STATES;

SEMICONDUCTING SILICON;

EID: 0031547876     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00974-3     Document Type: Article

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