A Monte-Carlo simulation of positron diffusion in solids

Applied Surface Science

Volumn 116, Issue , 1997, Pages 155-161

  Eichler, S ^a   Hubner C ^a   Krause Rehberg, R ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Monte Carlo simulation; Positron diffusion; Slow positron

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONTE CARLO METHODS; RANDOM PROCESSES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SURFACES;

POSITRON ANNIHILATION; POSITRON BEAMS; POSITRON IMPLANTATION ENERGY; POSITRON LIFETIMES; POSITRON TRAPPING; RANDOM WALK MODEL;

PARTICLE BEAMS;

EID: 0031547870     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01046-X     Document Type: Article

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