The radiation stimulated diffusion role in high dose, low energy, high temperature ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 265-268

  Valiev, S H ^b   Pugacheva, T S ^a   Jurabekova, F G ^a   Lem, S A ^a   Miyagawa, Y ^c  

^a TASHKENT STATE TECHNICAL UNIVERSITY   (Uzbekistan)

^b S YU YUNUSOV INSTITUTE OF THE CHEMISTRY OF PLANT SUBSTANCES   (Uzbekistan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BAND STRUCTURE; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; DOSIMETRY; HIGH TEMPERATURE OPERATIONS; IMPURITIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; PARTIAL DIFFERENTIAL EQUATIONS; RADIATION EFFECTS; SPUTTERING;

DIFFUSION EQUATIONS; NONEQUILIBRIUM VACANCIES; RADIATION STIMULATED DIFFUSION (RSD); SOFTWARE PACKAGE CASNEW;

ION IMPLANTATION;

EID: 0031547862     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00937-8     Document Type: Article

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