Experimental determination of positronic and electronic characteristics of 3C-SiC

Applied Surface Science

Volumn 116, Issue , 1997, Pages 19-22

  Brauer, G ^a   Anwand, W ^a   Nicht, E M ^a   Coleman, P G ^b   Wagner, N ^c   Wirth, H ^d   Skorupa, W ^d  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF EAST ANGLIA   (United Kingdom)

^c MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Diffusion length; Silicon carbide; Work function

Indexed keywords

DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

POSITRONS; WORK FUNCTIONS;

SILICON CARBIDE;

EID: 0031547761     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00967-1     Document Type: Article

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