Sputtering of III-V semiconductors under argon atom and ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 115-118

  Soshnikov, I P ^a   Kudriavtsev, Yu A ^a   Lunev, A V ^a   Bert, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ARGON; ATOMIC BEAMS; ATOMIZATION; ELECTRON MICROSCOPY; GOLD; MASS SPECTROMETERS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPUTTERING;

GALLIUM PHOSPHIDE; HAFF-SWITKOWSKI MODELS; INDIUM ARSENIDE; ION FLUX; SIGMUND-FALCONE MODELS; YUDIN'S APPROXIMATION;

ION BOMBARDMENT;

EID: 0031547684     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)01111-1     Document Type: Article

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