Positron studies of plasma-treated silicon wafers

Applied Surface Science

Volumn 116, Issue , 1997, Pages 228-230

  Van Der Werf, D P ^a   Nathwani, M ^a   Towner, A ^a   Taylor, J W ^a   Morton, R ^a   Knights, A P ^a   Rice Evans, P C ^a   Szekeres, A ^b  

^a UNIVERSITY OF LONDON   (United Kingdom)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

DOPPLER EFFECT; PLASMAS; SILICON;

HERODOTUS SLOW POSITRON BEAM; PLASMA TREATED SILICON WAFERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031547672     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01059-8     Document Type: Article

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