Direct deposition of silicon and silicon-oxide films using low-energy Si focused ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 893-896

  Yanagisawa, J ^a   Nakayama, H ^a   Matsuda, O ^a   Murase, K ^a   Gamo, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; DEPOSITION; EVAPORATION; FILM PREPARATION; GOLD; ION BEAMS; OXYGEN; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

FOCUSED ION BEAMS (FIB);

SEMICONDUCTING FILMS;

EID: 0031547620     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00027-X     Document Type: Article

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